Anisotropic Thermopower and Planar Nernst Effect in Ga1xMnxAs Ferromagnetic Semiconductors

Yong Pu, E. Johnston-Halperin, D. D. Awschalom, and Jing Shi
Phys. Rev. Lett. 97, 036601 – Published 20 July 2006

Abstract

We present the first experimental study of the thermopower in Mn-doped GaAs ferromagnetic semiconductors. Large magnetothermopower effects in both longitudinal and transverse directions have been observed below the ferromagnetic transition temperature. Unlike magnetoresistance, neither the transverse thermopower (planar Nernst effect) nor the longitudinal thermopower explicitly depend on the strength of the in-plane magnetic field, but rather are intimately related to each other through the magnetization. These newly discovered effects can be satisfactorily explained by an extension of anisotropic magnetotransport model and place important constraints on potential microscopic descriptions of the scattering mechanisms in these materials.

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  • Received 5 May 2006

DOI:https://doi.org/10.1103/PhysRevLett.97.036601

©2006 American Physical Society

Authors & Affiliations

Yong Pu1, E. Johnston-Halperin2, D. D. Awschalom2, and Jing Shi1

  • 1Department of Physics, University of California, Riverside, California 92521, USA
  • 2Department of Physics, University of California, Santa Barbara, California 93106, USA

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Issue

Vol. 97, Iss. 3 — 21 July 2006

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