Multiparadigm Modeling of Dynamical Crack Propagation in Silicon Using a Reactive Force Field

Markus J. Buehler, Adri C. T. van Duin, and William A. Goddard, III
Phys. Rev. Lett. 96, 095505 – Published 10 March 2006

Abstract

We report a study of dynamic cracking in a silicon single crystal in which the ReaxFF reactive force field is used for several thousand atoms near the crack tip, while more than 100 000 atoms are described with a nonreactive force field. ReaxFF is completely derived from quantum mechanical calculations of simple silicon systems without any empirical parameters. Our results reproduce experimental observations of fracture in silicon including changes in crack dynamics for different crack orientations.

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  • Received 17 August 2005

DOI:https://doi.org/10.1103/PhysRevLett.96.095505

©2006 American Physical Society

Authors & Affiliations

Markus J. Buehler1,2, Adri C. T. van Duin2, and William A. Goddard, III2,*

  • 1Department of Civil and Environmental Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Room 1-272, Cambridge, Massachusetts 02139, USA
  • 2Division of Chemistry and Chemical Engineering, California Institute of Technology, 1200 E. California Boulevard, Pasadena, California 91125, USA

  • *Corresponding author. Electronic address: wag@wag.caltech.edu

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Vol. 96, Iss. 9 — 10 March 2006

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