Nanosecond Domain Wall Dynamics in Ferroelectric Pb(Zr,Ti)O3 Thin Films

Alexei Grigoriev, Dal-Hyun Do, Dong Min Kim, Chang-Beom Eom, Bernhard Adams, Eric M. Dufresne, and Paul G. Evans
Phys. Rev. Lett. 96, 187601 – Published 8 May 2006

Abstract

Domain wall motion during polarization switching in ferroelectric thin films is fundamentally important and poses challenges for both experiments and modeling. We have visualized the switching of a Pb(Zr,Ti)O3 capacitor using time-resolved x-ray microdiffraction. The structural signatures of switching include a reversal in the sign of the piezoelectric coefficient and a change in the intensity of x-ray reflections. The propagation of polarization domain walls is highly reproducible from cycle to cycle of the electric field. Domain wall velocities of 40ms1 are consistent with the results of other methods, but are far less than saturation values expected at high electric fields.

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  • Received 5 January 2006

DOI:https://doi.org/10.1103/PhysRevLett.96.187601

©2006 American Physical Society

Authors & Affiliations

Alexei Grigoriev1, Dal-Hyun Do1, Dong Min Kim1, Chang-Beom Eom1, Bernhard Adams2, Eric M. Dufresne2, and Paul G. Evans1

  • 1Department of Materials Science and Engineering, University of Wisconsin Madison, Madison, Wisconsin 53706, USA
  • 2Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA

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Issue

Vol. 96, Iss. 18 — 12 May 2006

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