Abstract
The first evidence of successful -type doping of InN is presented. It is shown that films consist of a -type bulk region with a thin -type inversion layer at the surface that prevents electrical contact to the bulk. Capacitance-voltage measurements indicate a net concentration of ionized acceptors below the -type surface. Irradiation with 2 MeV ions is used to convert the bulk of from to -type, at which point photoluminescence is recovered. The conversion is well explained by a model assuming two parallel conducting layers (the surface and the bulk) in the films.
- Received 22 December 2005
DOI:https://doi.org/10.1103/PhysRevLett.96.125505
©2006 American Physical Society