Evidence for p-Type Doping of InN

R. E. Jones, K. M. Yu, S. X. Li, W. Walukiewicz, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff
Phys. Rev. Lett. 96, 125505 – Published 31 March 2006

Abstract

The first evidence of successful p-type doping of InN is presented. It is shown that InNMg films consist of a p-type bulk region with a thin n-type inversion layer at the surface that prevents electrical contact to the bulk. Capacitance-voltage measurements indicate a net concentration of ionized acceptors below the n-type surface. Irradiation with 2 MeV He+ ions is used to convert the bulk of InNMg from p to n-type, at which point photoluminescence is recovered. The conversion is well explained by a model assuming two parallel conducting layers (the surface and the bulk) in the films.

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  • Received 22 December 2005

DOI:https://doi.org/10.1103/PhysRevLett.96.125505

©2006 American Physical Society

Authors & Affiliations

R. E. Jones1,2, K. M. Yu1, S. X. Li1,2, W. Walukiewicz1, J. W. Ager1, E. E. Haller1,2, H. Lu3, and W. J. Schaff3

  • 1Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 2Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
  • 3Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA

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Vol. 96, Iss. 12 — 31 March 2006

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