Doping Controlled Superconductor-Insulator Transition in Bi2Sr2xLaxCaCu2O8+δ

Seongshik Oh, Trevis A. Crane, D. J. Van Harlingen, and J. N. Eckstein
Phys. Rev. Lett. 96, 107003 – Published 14 March 2006

Abstract

We show that the doping-controlled superconductor-insulator transition (SIT) in a high critical temperature cuprate system (Bi2Sr2xLaxCaCu2O8+δ) exhibits a fundamentally different behavior than is expected from conventional SIT. At the critical doping, the sheet resistance seems to diverge in the zero-temperature limit. Above the critical doping, the transport is universally scaled by a two-component conductance model. Below, it continuously evolves from weakly to strongly insulating behavior. The two-component conductance model suggests that a collective electronic phase-separation mechanism may be responsible for this unconventional SIT behavior.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 20 September 2005

DOI:https://doi.org/10.1103/PhysRevLett.96.107003

©2006 American Physical Society

Authors & Affiliations

Seongshik Oh*, Trevis A. Crane, D. J. Van Harlingen, and J. N. Eckstein

  • Department of Physics, University of Illinois, Urbana, Illinois 61801, USA

  • *Email address: soh4@uiuc.edu Present address: National Institute of Standards and Technology, Boulder, CO 80305, USA.

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 96, Iss. 10 — 17 March 2006

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×