Hall Effect in the Accumulation Layers on the Surface of Organic Semiconductors

V. Podzorov, E. Menard, J. A. Rogers, and M. E. Gershenson
Phys. Rev. Lett. 95, 226601 – Published 21 November 2005

Abstract

We have observed the Hall effect in the field-induced accumulation layer on the surface of single-crystal samples of a small-molecule organic semiconductor rubrene. The Hall mobility μH increases with decreasing temperature in both the intrinsic (high-temperature) and trap-dominated (low-temperature) conduction regimes. In the intrinsic regime, the density of mobile field-induced charge carriers extracted from the Hall measurements, nH, coincides with the density n calculated using the gate-channel capacitance and becomes smaller than n in the trap-dominated regime. The Hall data are consistent with the diffusive bandlike motion of field-induced charge carriers between trapping events.

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  • Received 30 July 2005

DOI:https://doi.org/10.1103/PhysRevLett.95.226601

©2005 American Physical Society

Authors & Affiliations

V. Podzorov1,*, E. Menard2,3, J. A. Rogers2, and M. E. Gershenson1

  • 1Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey, USA
  • 2Department of Materials Science and Engineering, University of Illinois, Urbana-Champaign, Illinois, USA
  • 3CEA-Saclay, LCR Semi-Conducteurs Organiques, SPCSI/DRECAM/DSM, F-91191 Gif-sur-Yvette, France

  • *Electronic address: podzorov@physics.rutgers.edu

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Issue

Vol. 95, Iss. 22 — 25 November 2005

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