Abstract
We have observed the Hall effect in the field-induced accumulation layer on the surface of single-crystal samples of a small-molecule organic semiconductor rubrene. The Hall mobility increases with decreasing temperature in both the intrinsic (high-temperature) and trap-dominated (low-temperature) conduction regimes. In the intrinsic regime, the density of mobile field-induced charge carriers extracted from the Hall measurements, , coincides with the density calculated using the gate-channel capacitance and becomes smaller than in the trap-dominated regime. The Hall data are consistent with the diffusive bandlike motion of field-induced charge carriers between trapping events.
- Received 30 July 2005
DOI:https://doi.org/10.1103/PhysRevLett.95.226601
©2005 American Physical Society