Evidence for Native-Defect Donors in n-Type ZnO

D. C. Look, G. C. Farlow, Pakpoom Reunchan, Sukit Limpijumnong, S. B. Zhang, and K. Nordlund
Phys. Rev. Lett. 95, 225502 – Published 21 November 2005
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Abstract

Recent theory has found that native defects such as the O vacancy VO and Zn interstitial ZnI have high formation energies in n-type ZnO and, thus, are not important donors, especially in comparison to impurities such as H. In contrast, we use both theory and experiment to show that, under N ambient, the complex ZnINO is a stronger candidate than H or any other known impurity for a 30 meV donor commonly found in bulk ZnO grown from the vapor phase. Since the Zn vacancy is also the dominant acceptor in such material, we must conclude that native defects are important donors and acceptors in ZnO.

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  • Received 5 August 2005

DOI:https://doi.org/10.1103/PhysRevLett.95.225502

©2005 American Physical Society

Authors & Affiliations

D. C. Look1,2, G. C. Farlow1, Pakpoom Reunchan3, Sukit Limpijumnong3,4, S. B. Zhang4, and K. Nordlund5

  • 1Semiconductor Research Center, Wright State University, Dayton, Ohio 45435, USA
  • 2Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA
  • 3School of Physics, Suranaree University of Technology and National Synchrotron Research Center, Nakhon Ratchasima, Thailand
  • 4National Renewal Energy Laboratory, Golden, Colorado 80401, USA
  • 5Accelerator Laboratory, University of Helsinki, FIN-00014, Helsinki, Finland

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Issue

Vol. 95, Iss. 22 — 25 November 2005

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