Spin Noise Spectroscopy in GaAs

M. Oestreich, M. Römer, R. J. Haug, and D. Hägele
Phys. Rev. Lett. 95, 216603 – Published 17 November 2005

Abstract

We observe the noise spectrum of electron spins in bulk GaAs by Faraday-rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron-spin dynamics in semiconductors. We measure exemplarily the electron-spin relaxation time and the electron Landé g factor in n-doped GaAs at low temperatures and find good agreement of the measured noise spectrum with a theory based on Poisson distribution probability.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 18 May 2005

DOI:https://doi.org/10.1103/PhysRevLett.95.216603

©2005 American Physical Society

Authors & Affiliations

M. Oestreich, M. Römer, R. J. Haug, and D. Hägele

  • Institut für Festkörperphysik, Universität Hannover, Appelstraße 2, D-30167 Hannover, Germany

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 95, Iss. 21 — 18 November 2005

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×