Abstract
We observe the noise spectrum of electron spins in bulk GaAs by Faraday-rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron-spin dynamics in semiconductors. We measure exemplarily the electron-spin relaxation time and the electron Landé g factor in -doped GaAs at low temperatures and find good agreement of the measured noise spectrum with a theory based on Poisson distribution probability.
- Received 18 May 2005
DOI:https://doi.org/10.1103/PhysRevLett.95.216603
©2005 American Physical Society