Controlling the Spontaneous Emission Rate of Single Quantum Dots in a Two-Dimensional Photonic Crystal

Dirk Englund, David Fattal, Edo Waks, Glenn Solomon, Bingyang Zhang, Toshihiro Nakaoka, Yasuhiko Arakawa, Yoshihisa Yamamoto, and Jelena Vučković
Phys. Rev. Lett. 95, 013904 – Published 1 July 2005

Abstract

We observe large spontaneous emission rate modification of individual InAs quantum dots (QDs) in a 2D photonic crystal with a modified, high-Q single-defect cavity. Compared to QDs in a bulk semiconductor, QDs that are resonant with the cavity show an emission rate increase of up to a factor of 8. In contrast, off-resonant QDs indicate up to fivefold rate quenching as the local density of optical states is diminished in the photonic crystal. In both cases, we demonstrate photon antibunching, showing that the structure represents an on-demand single photon source with a pulse duration from 210 ps to 8 ns. We explain the suppression of QD emission rate using finite difference time domain simulations and find good agreement with experiment.

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  • Received 17 January 2005

DOI:https://doi.org/10.1103/PhysRevLett.95.013904

©2005 American Physical Society

Authors & Affiliations

Dirk Englund1, David Fattal1, Edo Waks1, Glenn Solomon1,2, Bingyang Zhang1, Toshihiro Nakaoka3, Yasuhiko Arakawa3, Yoshihisa Yamamoto1, and Jelena Vučković1

  • 1Ginzton Laboratory, Stanford University, Stanford, California 94305, USA
  • 2Solid-State Photonics Laboratory, Stanford University, Stanford, California 94305, USA
  • 3Institute of Industrial Science, University of Tokyo, Tokyo, Japan

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Vol. 95, Iss. 1 — 1 July 2005

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