New Types of Unstable Step-Flow Growth on Si(111)(7×7) during Molecular Beam Epitaxy: Scaling and Universality

Hiroo Omi, Yoshikazu Homma, Vesselin Tonchev, and Alberto Pimpinelli
Phys. Rev. Lett. 95, 216101 – Published 15 November 2005

Abstract

New types of unstable homoepitaxial growth of vicinal Si(111)(7×7) surfaces are studied using ex situ atomic force microscopy. The growth features are two types of step bunching with straight step edges between 700 and 775 °C and one type of simultaneous bunching and meandering at 800 °C. The results of a quantitative size scaling analysis of the straight steps are discussed from the perspective of universality classes in bunching theory.

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  • Received 16 May 2005

DOI:https://doi.org/10.1103/PhysRevLett.95.216101

©2005 American Physical Society

Authors & Affiliations

Hiroo Omi* and Yoshikazu Homma

  • NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya Atsugi, Kanagawa 243-0198, Japan

Vesselin Tonchev

  • Institute of Physical Chemistry, Bulgarian Academy of Sciences, 1113 Sofia, Bulgaria

Alberto Pimpinelli

  • LASMEA, UMR 6602 CNRS/Université Blaise-Pascal—Clermont 2, F-63177 Aubiére Cedex, France

  • *Corresponding author. Electronic address: homi@will.brl.ntt.co.jp
  • Present address: Department of Physics, Tokyo University of Science, Kagurazaka 1-3, Shinjuku-ku, Tokyo 162-8601, Japan.

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Vol. 95, Iss. 21 — 18 November 2005

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