Orbital-Assisted Metal-Insulator Transition in VO2

M. W. Haverkort, Z. Hu, A. Tanaka, W. Reichelt, S. V. Streltsov, M. A. Korotin, V. I. Anisimov, H. H. Hsieh, H.-J. Lin, C. T. Chen, D. I. Khomskii, and L. H. Tjeng
Phys. Rev. Lett. 95, 196404 – Published 2 November 2005

Abstract

We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO2. We have used soft-x-ray absorption spectroscopy at the V L2,3 edges as a sensitive local probe and have determined quantitatively the orbital polarizations. These results strongly suggest that, in going from the metallic to the insulating state, the orbital occupation changes in a manner that charge fluctuations and effective bandwidths are reduced, that the system becomes more one dimensional and more susceptible to a Peierls-like transition, and that the required massive orbital switching can only be made if the system is close to a Mott insulating regime.

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  • Received 6 June 2005

DOI:https://doi.org/10.1103/PhysRevLett.95.196404

©2005 American Physical Society

Authors & Affiliations

M. W. Haverkort1, Z. Hu1, A. Tanaka2, W. Reichelt3, S. V. Streltsov4, M. A. Korotin4, V. I. Anisimov4, H. H. Hsieh5, H.-J. Lin6, C. T. Chen6, D. I. Khomskii1, and L. H. Tjeng1

  • 1II. Physikalisches Institut, Universität zu Köln, Zülpicher Strasse 77, D-50937 Köln, Germany
  • 2Department of Quantum Matter, ADSM, Hiroshima University, Higashi-Hiroshima 739-8530, Japan
  • 3Institut für Anorganische Chemie, Technische Universität Dresden, Mommsenstrasse 13, D-01069 Dresden, Germany
  • 4Institute of Metal Physics, S. Kovalevskoy 18, 620219 Ekaterinburg GSP-170, Russia
  • 5Chung Cheng Institute of Technology, National Defense University, Taoyuan 335, Taiwan
  • 6National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu 30077, Taiwan

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Issue

Vol. 95, Iss. 19 — 4 November 2005

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