Abstract
We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain precise information on the spin and energy dependence of the density of states. Our analysis leads to a quantitative description of the band structure of including the energy gap between the Fermi level and the bottom of the minority-spin band, in good agreement with data from spin-polarized inverse photoemission experiments. This shows the potential of magnetic tunnel junctions with half-metallic electrodes for spin-resolved spectroscopic studies.
- Received 22 September 2004
DOI:https://doi.org/10.1103/PhysRevLett.95.137203
©2005 American Physical Society