Spin-Polarized Tunneling Spectroscopy in Tunnel Junctions with Half-Metallic Electrodes

M. Bowen, A. Barthélémy, M. Bibes, E. Jacquet, J.-P. Contour, A. Fert, F. Ciccacci, L. Duò, and R. Bertacco
Phys. Rev. Lett. 95, 137203 – Published 21 September 2005

Abstract

We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain precise information on the spin and energy dependence of the density of states. Our analysis leads to a quantitative description of the band structure of La2/3Sr1/3MnO3 including the energy gap δ between the Fermi level and the bottom of the t2g minority-spin band, in good agreement with data from spin-polarized inverse photoemission experiments. This shows the potential of magnetic tunnel junctions with half-metallic electrodes for spin-resolved spectroscopic studies.

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  • Received 22 September 2004

DOI:https://doi.org/10.1103/PhysRevLett.95.137203

©2005 American Physical Society

Authors & Affiliations

M. Bowen1, A. Barthélémy1,*, M. Bibes1,†, E. Jacquet1, J.-P. Contour1, A. Fert1, F. Ciccacci2, L. Duò2, and R. Bertacco2

  • 1Unité Mixte de Physique CNRS-Thales, Route Départementale 129, 91767 Palaiseau, France
  • 2Dipartimento di Fisica del Politecnico di Milano, INFM and L-NESS, via Anzani 52, 22100 Como, Italy

  • *Electronic address: agnes.barthelemy@thalesgroup.com
  • Now at Institut d’Electronique Fondamentale, Université Paris-Sud, 91405 Orsay, France.

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Issue

Vol. 95, Iss. 13 — 23 September 2005

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