Coulomb Promotion of Spin-Dependent Tunneling

L. Y. Gorelik, S. I. Kulinich, R. I. Shekhter, M. Jonson, and V. M. Vinokur
Phys. Rev. Lett. 95, 116806 – Published 9 September 2005

Abstract

We study transport of spin-polarized electrons through a magnetic single-electron transistor (SET) in the presence of an external magnetic field. Assuming the SET to have a nanometer size central island with a single-electron level we find that the interplay on the island between coherent spin-flip dynamics and Coulomb interactions can make the Coulomb correlations promote rather than suppress the current through the device. We find the criteria for this new phenomenon—Coulomb promotion of spin-dependent tunneling—to occur.

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  • Received 7 March 2005

DOI:https://doi.org/10.1103/PhysRevLett.95.116806

©2005 American Physical Society

Authors & Affiliations

L. Y. Gorelik1, S. I. Kulinich1,2, R. I. Shekhter3, M. Jonson3, and V. M. Vinokur4

  • 1Department of Applied Physics, Chalmers University of Technology, SE-412 96 Göteborg, Sweden
  • 2B. I. Verkin Institute for Low Temperature Physics and Engineering, 47 Lenin Avenue, 61103 Kharkov, Ukraine
  • 3Department of Physics, Göteborg University, SE-412 96 Göteborg, Sweden
  • 4Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 6043, USA

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Issue

Vol. 95, Iss. 11 — 9 September 2005

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