Abstract
Using a low temperature growth method, we have prepared atomically flat Pb thin films over a wide range of film thickness on a Si-(111)- surface. The Pb film morphology and electronic structure are investigated in situ by scanning tunneling microscopy and angle-resolved photoemission spectroscopy. Well-defined and atomic-layer-resolved quantum-well states of the Pb films are used to determine the band structure and the electron-phonon coupling constant () of the films. We found an oscillatory behavior of with an oscillation periodicity of two atomic layers. Almost all essential features in the system, such as the growth mode, the oscillatory film stability, and the 9 monolayer envelope beating pattern, can be explained by our results in terms of the electron confinement in Pb films.
- Received 14 December 2004
DOI:https://doi.org/10.1103/PhysRevLett.95.096802
©2005 American Physical Society