Photoemission Electron Microscopy as a Tool for the Investigation of Optical Near Fields

M. Cinchetti, A. Gloskovskii, S. A. Nepjiko, G. Schönhense, H. Rochholz, and M. Kreiter
Phys. Rev. Lett. 95, 047601 – Published 21 July 2005

Abstract

Photoemission electron microscopy was used to image the electrons photoemitted from specially tailored Ag nanoparticles deposited on a Si substrate (with its native oxide SiOx). Photoemission was induced by illumination with a Hg UV lamp (photon energy cutoff ωUV=5.0eV, wavelength λUV=250nm) and with a Ti:sapphire femtosecond laser (ωl=3.1eV, λl=400nm, pulse width below 200 fs), respectively. While homogeneous photoelectron emission from the metal is observed upon illumination at energies above the silver plasmon frequency, at lower photon energies the emission is localized at tips of the structure. This is interpreted as a signature of the local electrical field therefore providing a tool to map the optical near field with the resolution of emission electron microscopy.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 15 December 2004

DOI:https://doi.org/10.1103/PhysRevLett.95.047601

©2005 American Physical Society

Authors & Affiliations

M. Cinchetti, A. Gloskovskii, S. A. Nepjiko, and G. Schönhense

  • Johannes Gutenberg-Universität, Institut für Physik, 55099 Mainz, Germany

H. Rochholz and M. Kreiter*

  • Max Planck Institut für Polymerforschung, 55128 Mainz, Germany

  • *Electronic address: kreiter@mpip-mainz.mpg.de

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 95, Iss. 4 — 22 July 2005

Reuse & Permissions
Access Options

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×