Intertwined Electronic and Structural Phase Transitions in the In/Si(111) Interface

Jiandong Guo, Geunseop Lee, and E. W. Plummer
Phys. Rev. Lett. 95, 046102 – Published 22 July 2005

Abstract

The structural (4×1) to (8×2) transition and the electronic metal to semimetal transition at the In/Si interface are studied with scanning tunneling microscopy and spectroscopy. Both transitions are gradual, resulting in a complex domain structure in the transition temperature regime. At these intermediate temperatures, the metallic (4×1) and semimetallic (8×2) domains coexist with each other and with new nanophases. By probing the two intertwined but distinguishable transitions at the atomic level, the interaction between different phases is visualized directly.

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  • Received 24 December 2004

DOI:https://doi.org/10.1103/PhysRevLett.95.046102

©2005 American Physical Society

Authors & Affiliations

Jiandong Guo1, Geunseop Lee2, and E. W. Plummer1,3

  • 1Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
  • 2Department of Physics, Inha University, Inchon 402-751, Korea
  • 3Condensed-Matter Science Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

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Vol. 95, Iss. 4 — 22 July 2005

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