Electronic Sputtering of Silicon Suboxide Films by Swift Heavy Ions

W. M. Arnoldbik, P. A. Zeijlmans van Emmichoven, and F. H. P. M. Habraken
Phys. Rev. Lett. 94, 245504 – Published 24 June 2005

Abstract

Two regimes are discerned experimentally in the electronic sputtering of silicon suboxide (SiOx) films under irradiation with 50 MeV Cu ions. For x<1 the removal rate is low and increases with x; for 1.5<x<2 the removal rate is high and about constant [(1.62.0)×103 atoms per incoming ion]. The transition occurs at x values where the electronic structure of SiOx has a transition. We propose a model, which connects the electronic sputter rate with the SiOx electronic structure considering the lifetime of the ion track.

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  • Received 4 February 2005

DOI:https://doi.org/10.1103/PhysRevLett.94.245504

©2005 American Physical Society

Authors & Affiliations

W. M. Arnoldbik, P. A. Zeijlmans van Emmichoven, and F. H. P. M. Habraken

  • Surfaces, Interfaces and Devices, Debye Institute, Faculty of Physics and Astronomy, Utrecht University, P.O. Box 80.000, NL-3508 TA Utrecht, The Netherlands

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Vol. 94, Iss. 24 — 24 June 2005

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