Comment on “Structural Analysis of the ${\mathrm{SiO}}_2/\mathrm{Si}(100)$ Interface by Means of Photoelectron Diffraction”

A Comment on the Letter by S. Dreiner, M. Schürmann, and C. Westphal Phys. Rev. Lett. 93, 126101 (2004). The authors of the Letter offer a Reply.

Figure 1

$R$ factor as a function of Si-O bond length $d$ and Si-O bond angle $\alpha$ reproduced from 1, with the addition of first-principles results for various interface models featuring O bridges (see text) [3, 4].