Role of Disorder in Mn:GaAs, Cr:GaAs, and Cr:GaN

J. L. Xu, M. van Schilfgaarde, and G. D. Samolyuk
Phys. Rev. Lett. 94, 097201 – Published 9 March 2005

Abstract

We present calculations of magnetic exchange interactions and critical temperature Tc in Ga1xMnxAs, Ga1xCrxAs, and Ga1xCrxN. The local spin-density approximation is combined with a linear-response technique to map the magnetic energy onto a Heisenberg Hamiltonion, but no significant further approximations are made. We show the following: (i) configurational disorder results in large dispersions in the pairwise exchange interactions; (ii) the disorder strongly reduces Tc; (iii) clustering in the magnetic atoms, whose tendency is predicted from total-energy considerations, further reduces Tc, while ordering the dopants on a lattice increases it. With all the factors taken into account, Tc is reasonably predicted by the local spin-density approximation in Mn:GaAs without the need to invoke compensation by donor impurities.

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  • Received 10 August 2004

DOI:https://doi.org/10.1103/PhysRevLett.94.097201

©2005 American Physical Society

Authors & Affiliations

J. L. Xu and M. van Schilfgaarde

  • Department of Chemical and Materials Engineering, Arizona State University, Tempe, Arizona, 85287, USA

G. D. Samolyuk

  • Ames Laboratory, Iowa State University, Ames, Iowa, 50011, USA

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Issue

Vol. 94, Iss. 9 — 11 March 2005

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