New Type of Charged Defect in Amorphous Chalcogenides

S. I. Simdyankin, T. A. Niehaus, G. Natarajan, Th. Frauenheim, and S. R. Elliott
Phys. Rev. Lett. 94, 086401 – Published 2 March 2005

Abstract

We report on density-functional-based tight-binding simulations of a series of amorphous arsenic sulfide models. In addition to the charged coordination defects previously proposed to exist in chalcogenide glasses, a novel defect pair, [As4]-[S3]+, consisting of a fourfold coordinated arsenic site in a seesaw configuration and a threefold coordinated sulfur site in a near-planar trigonal configuration, was found in several models. The valence-alternation pairs [S3]+-S1 are converted into [As4]-[S3]+ pairs under HOMO-to-LUMO electronic excitation. This structural transformation is accompanied by a decrease in the size of the HOMO-LUMO band gap, which suggests that such transformations could contribute to photodarkening in these materials.

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  • Received 17 September 2004

DOI:https://doi.org/10.1103/PhysRevLett.94.086401

©2005 American Physical Society

Authors & Affiliations

S. I. Simdyankin1,*, T. A. Niehaus2, G. Natarajan1, Th. Frauenheim2, and S. R. Elliott1

  • 1Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW, United Kingdom
  • 2Fachbereich 6 - Theoretische Physik, Universität Paderborn, Warburger Straße 100, D-33098, Paderborn, Germany

  • *Electronic address: sis24@cam.ac.uk

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Vol. 94, Iss. 8 — 4 March 2005

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