Optical Phonon Sidebands of Electronic Intersubband Absorption in Strongly Polar Semiconductor Heterostructures

Z. Wang, K. Reimann, M. Woerner, T. Elsaesser, D. Hofstetter, J. Hwang, W. J. Schaff, and L. F. Eastman
Phys. Rev. Lett. 94, 037403 – Published 26 January 2005

Abstract

We present the first evidence for a distinct optical phonon progression in the linear and nonlinear intersubband absorption spectra of electrons in a GaN/Al0.8Ga0.2N heterostructure. Femtosecond two-color pump-probe experiments in the midinfrared reveal spectral holes on different vibronic transitions separated by the LO-phonon frequency. These features wash out with a decay time of 80 fs due to spectral diffusion. The remaining nonlinear transmission changes decay with a time constant of 380 fs. All results observed are described by the independent boson model.

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  • Received 13 May 2004

DOI:https://doi.org/10.1103/PhysRevLett.94.037403

©2005 American Physical Society

Authors & Affiliations

Z. Wang1, K. Reimann1, M. Woerner1,*, T. Elsaesser1, D. Hofstetter2, J. Hwang3, W. J. Schaff3, and L. F. Eastman3

  • 1Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, 12489 Berlin, Germany
  • 2University of Neuchâtel, Institute of Physics, 2000 Neuchâtel, Switzerland
  • 3Cornell University, 415 Phillips Hall, Ithaca, New York 14853, USA

  • *Electronic address: woerner@mbi-berlin.de

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Vol. 94, Iss. 3 — 28 January 2005

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