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Mobile Ambipolar Domain in Carbon-Nanotube Infrared Emitters

Marcus Freitag, Jia Chen, J. Tersoff, James C. Tsang, Qiang Fu, Jie Liu, and Phaedon Avouris
Phys. Rev. Lett. 93, 076803 – Published 11 August 2004
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Abstract

We spatially resolve the infrared light emission from ambipolar carbon-nanotube field-effect transistors with long-channel lengths. Electrons and holes are injected from opposite contacts into a single nanotube molecule. The ambipolar domain, where electron and hole currents overlap, forms a microscopic light emitter within the carbon nanotube. We can control its location by varying gate and drain voltages. At high electric fields, additional stationary spots appear due to defect-assisted Zener tunneling or impact ionization. The laterally resolved measurement provides valuable insight into the transistor behavior, complementary to electronic device characteristics.

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  • Received 18 March 2004

DOI:https://doi.org/10.1103/PhysRevLett.93.076803

©2004 American Physical Society

Authors & Affiliations

Marcus Freitag1,2, Jia Chen1, J. Tersoff1, James C. Tsang1, Qiang Fu3, Jie Liu3, and Phaedon Avouris1,*

  • 1IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598, USA
  • 2Carbon Nanotechnologies, Inc., Houston, Texas 77084, USA
  • 3Department of Chemistry, Duke University, Durham, North Carolina 27708, USA

  • *Electronic address: avouris@us.ibm.com

See Also

Spotlight on Nanotubes

Adrian Cho
Phys. Rev. Focus 14, 8 (2004)

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Issue

Vol. 93, Iss. 7 — 13 August 2004

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