Strong Coupling between Surface Plasmons and Excitons in an Organic Semiconductor

J. Bellessa, C. Bonnand, J. C. Plenet, and J. Mugnier
Phys. Rev. Lett. 93, 036404 – Published 15 July 2004

Abstract

We report on the observation of a strong coupling between a surface plasmon and an exciton. Reflectometry experiments are performed on an organic semiconductor, namely, cyanide dye J aggregates, deposited on a silver film. The dispersion lines present an anticrossing that is the signature of a strong plasmon-exciton coupling. Mixed states are formed in a similar way as microcavities polaritons. The Rabi splitting characteristic of this coupling reaches 180 meV at room temperature. The emission of the low energy plasmon-exciton mixed state has been observed and is largely shifted from the uncoupled emission.

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  • Received 23 March 2004

DOI:https://doi.org/10.1103/PhysRevLett.93.036404

©2004 American Physical Society

Authors & Affiliations

J. Bellessa*, C. Bonnand, and J. C. Plenet

  • Laboratoire de Physique de la Matière condensée et Nanostructures, CNRS UMR 5586, Univ. Lyon-1, Villeurbanne 69622, France

J. Mugnier

  • Laboratoire de Physico-Chimie des Matériaux Luminescents, CNRS UMR 5620, Univ. Lyon-1, Villeurbanne 69622, France

  • *Electronic address: bellessa@lpmcn.univ-lyon1.fr

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Vol. 93, Iss. 3 — 16 July 2004

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