Dependence of the Superconducting Transition Temperature on the Doping Level in Single-Crystalline Diamond Films

E. Bustarret, J. Kačmarčik, C. Marcenat, E. Gheeraert, C. Cytermann, J. Marcus, and T. Klein
Phys. Rev. Lett. 93, 237005 – Published 1 December 2004

Abstract

Homoepitaxial diamond layers doped with boron in the 10201021cm3 range are shown to be type II superconductors with sharp transitions (0.2K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity in those 001-oriented single-crystalline films is about 57   1020cm3. The HT phase diagram has been obtained from transport and ac-susceptibility measurements down to 300  mK.

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  • Received 5 August 2004

DOI:https://doi.org/10.1103/PhysRevLett.93.237005

©2004 American Physical Society

Authors & Affiliations

E. Bustarret1, J. Kačmarčik2,3, C. Marcenat2, E. Gheeraert1, C. Cytermann4, J. Marcus1, and T. Klein1,5

  • 1Laboratoire d’Etudes des Propriétés Electroniques des Solides, CNRS, B.P.166, 38042 Grenoble Cedex 9, France
  • 2Commissariat à l’Energie Atomique - Grenoble, Département de Recherche Fondamentale sur la Matière Condensée, SPSMS, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
  • 3Centre of Low Temperature Physics IEP Slovakian Academy of Sciences & FS UPJŠ, Watsonova 47, 043 53 Košice, Slovakia
  • 4Solid State Institute, Technion, 32000 Haifa, Israel
  • 5Institut Universitaire de France and Université Joseph Fourier, B.P.53, 38041 Grenoble Cedex 9, France

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Issue

Vol. 93, Iss. 23 — 3 December 2004

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