Laser-Induced Above-Band-Gap Transparency in GaAs

Ajit Srivastava, Rahul Srivastava, Jigang Wang, and Junichiro Kono
Phys. Rev. Lett. 93, 157401 – Published 4 October 2004

Abstract

We report the observation of large (40%) laser-induced above-band-gap transparency in GaAs at room temperature. The induced transparency is present only during the pulse width of the driving midinfrared laser pulses and its spectral shape is consistent with a laser-induced blueshift of the band edge. Our simulations based on the dynamic Franz-Keldysh effect reproduce the salient features of the experimental results, demonstrating, in particular, that the amount of the band edge shift is approximately given by the ponderomotive potential.

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  • Received 20 March 2004

DOI:https://doi.org/10.1103/PhysRevLett.93.157401

©2004 American Physical Society

Authors & Affiliations

Ajit Srivastava, Rahul Srivastava, Jigang Wang, and Junichiro Kono*

  • Department of Electrical and Computer Engineering, Rice Quantum Institute, and Center for Nanoscale Science and Technology, Rice University, Houston, Texas 77005, USA

  • *To whom correspondence should be addressed. Electronic address: kono@rice.edu URL: http://www.ece.rice.edu/~kono

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Issue

Vol. 93, Iss. 15 — 8 October 2004

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