Two-Flux Composite Fermion Series of the Fractional Quantum Hall States in Strained Si

K. Lai, W. Pan, D. C. Tsui, S. Lyon, M. Mühlberger, and F. Schäffler
Phys. Rev. Lett. 93, 156805 – Published 8 October 2004

Abstract

Magnetotransport properties are investigated in a high-mobility two-dimensional electron system in the strained Si quantum well of a (100) Si0.75Ge0.25/Si/Si0.75Ge0.25 heterostructure, at temperatures down to 30 mK and in magnetic fields up to 45 T. We observe around ν=1/2 the two-flux composite fermion (CF) series of the fractional quantum Hall effect (FQHE) at ν=2/3,   3/5,   4/7, and at ν=4/9,2/5,1/3. Among these FQHE states, the ν=1/3,4/7, and 4/9 states are seen for the first time in the Si/SiGe system. Interestingly, of the CF series, the 3/5 state is weaker than the nearby 4/7 state and the 3/7 state is conspicuously missing, resembling the observation in the IQHE regime that the ν=3 is weaker than the nearby ν=4 state. Our results can be quantitatively understood in the picture of CF's with the valley degree of freedom.

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  • Received 5 March 2004

DOI:https://doi.org/10.1103/PhysRevLett.93.156805

©2004 American Physical Society

Authors & Affiliations

K. Lai1, W. Pan2, D. C. Tsui1, S. Lyon1, M. Mühlberger3, and F. Schäffler3

  • 1Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
  • 2Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
  • 3Institut für Halbleiterphysik, Universität Linz, Linz, Austria

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Vol. 93, Iss. 15 — 8 October 2004

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