Electronic Structures of RTe2 (R=La,Ce): A Clue to the Pressure-Induced Superconductivity in CeTe1.82

J. H. Shim, J.-S. Kang, and B. I. Min
Phys. Rev. Lett. 93, 156406 – Published 7 October 2004

Abstract

Electronic structures of RTe2 (R=La,Ce) have been investigated by using the local spin density approximation (LSDA) and the LSDA+U (U: on-site Coulomb interaction) band methods. Both LaTe2 and CeTe2 show the very similar Fermi surface nesting features along the [100] direction, which drive the charge-density wave (CDW) instability in the Te(1) sheets. The contribution near EF from Ce 4f states is negligible in agreement with the measured ARPES spectra. In the semimetallic CDW-distorted RTe2, both Te vacancy and pressure induce the charge transfer from Te(1) 5p to R 5d states, producing the enhanced density of states at EF. We suggest that these increased self-doped Te(1) 5p hole carriers are responsible for the pressure-induced superconductivity in nonstoichiometric CeTe1.82.

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  • Received 28 April 2004

DOI:https://doi.org/10.1103/PhysRevLett.93.156406

©2004 American Physical Society

Authors & Affiliations

J. H. Shim1, J.-S. Kang2, and B. I. Min1

  • 1Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Korea
  • 2Department of Physics, The Catholic University of Korea, Puchon 420-743, Korea

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Vol. 93, Iss. 15 — 8 October 2004

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