Modeling Phase Separation in Nonstoichiometric Silica

V. M. Burlakov, G. A. D. Briggs, A. P. Sutton, Angelo Bongiorno, and Alfredo Pasquarello
Phys. Rev. Lett. 93, 135501 – Published 20 September 2004

Abstract

We have modeled the decomposition of nonstoichiometric amorphous SiOx upon annealing into silicon and stoichiometric silica, using a new method based on mapping Metropolis Monte Carlo simulations onto rate equations. The concentrations of all oxidation states of silicon are derived as a function of time and found to attain steady-state values at long times dependent on temperature T and oxygen content x. The degree of phase separation and the sizes of Si particles are predicted as a function of T and x, enabling greater control over the size of silicon quantum dots in silica matrices.

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  • Received 7 October 2003

DOI:https://doi.org/10.1103/PhysRevLett.93.135501

©2004 American Physical Society

Authors & Affiliations

V. M. Burlakov1,*, G. A. D. Briggs1, A. P. Sutton1,†, Angelo Bongiorno2, and Alfredo Pasquarello2

  • 1Department of Materials, University of Oxford, Parks Road, Oxford OXI 3PH, United Kingdom
  • 2Institute de Théorie des Phénoménes Physiques (ITP), Ecole Polytechnique Fédérale de Lausanne (EPDL), CH-1015 Switzerland and Institut de Recherche Numérique en Physique des Matériaux (IRRMA), CH-1015 Lausanne, Switzerland

  • *On leave from the Institute for Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow region, 142090, Russia
  • Also Helsinki University of Technology, Laboratory of Computational Engineering, PO Box 9203, FIN-02015 HUT, Finland.

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Vol. 93, Iss. 13 — 24 September 2004

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