Counterflow Measurements in Strongly Correlated GaAs Hole Bilayers: Evidence for Electron-Hole Pairing

E. Tutuc, M. Shayegan, and D. A. Huse
Phys. Rev. Lett. 93, 036802 – Published 12 July 2004

Abstract

We study interacting GaAs bilayer hole systems, with very small interlayer tunneling, in a counterflow geometry where equal currents are passed in opposite directions in the two, independently contacted layers. At low temperatures, both the longitudinal and Hall counterflow resistances tend to vanish in the quantum Hall state at total bilayer filling ν=1, demonstrating the pairing of oppositely charged carriers in opposite layers. The counterflow Hall resistance decreases much more strongly than the longitudinal resistances as the temperature is reduced.

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  • Received 6 February 2004

DOI:https://doi.org/10.1103/PhysRevLett.93.036802

©2004 American Physical Society

Authors & Affiliations

E. Tutuc and M. Shayegan

  • Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

D. A. Huse

  • Department of Physics, Princeton University, Princeton, New Jersey 08544, USA

See Also

Vanishing Hall Resistance at High Magnetic Field in a Double-Layer Two-Dimensional Electron System

M. Kellogg, J. P. Eisenstein, L. N. Pfeiffer, and K. W. West
Phys. Rev. Lett. 93, 036801 (2004)

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Vol. 93, Iss. 3 — 16 July 2004

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