Light-Induced Gaps in Semiconductor Band-to-Band Transitions

Q.  T. Vu, H. Haug, O.  D. Mücke, T. Tritschler, M. Wegener, G. Khitrova, and H.  M. Gibbs
Phys. Rev. Lett. 92, 217403 – Published 27 May 2004

Abstract

We observe a triplet around the third harmonic of the semiconductor band gap when exciting 50–100 nm thin GaAs films with 5 fs pulses at 3×1012W/cm2. The comparison with solutions of the semiconductor Bloch equations allows us to interpret the observed peak structure as being due to a two-band Mollow triplet. This triplet in the optical spectrum is a result of light-induced gaps in the band structure, which arise from coherent band mixing. The theory is formulated for full tight-binding bands and uses no rotating-wave approximation.

  • Figure
  • Figure
  • Figure
  • Received 4 December 2003

DOI:https://doi.org/10.1103/PhysRevLett.92.217403

©2004 American Physical Society

Authors & Affiliations

Q.  T. Vu and H. Haug

  • Institut für Theoretische Physik, Universität Frankfurt, 60054 Frankfurt am Main, Germany

O.  D. Mücke, T. Tritschler, and M. Wegener

  • Institut für Angewandte Physik, Universität Karlsruhe (TH), Wolfgang-Gaede-Straße 1, 76131 Karlsruhe, Germany

G. Khitrova and H.  M. Gibbs

  • Optical Sciences Center, University of Arizona, Tucson, Arizona 85721, USA

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 92, Iss. 21 — 28 May 2004

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×