Abstract
We observe a triplet around the third harmonic of the semiconductor band gap when exciting 50–100 nm thin GaAs films with 5 fs pulses at . The comparison with solutions of the semiconductor Bloch equations allows us to interpret the observed peak structure as being due to a two-band Mollow triplet. This triplet in the optical spectrum is a result of light-induced gaps in the band structure, which arise from coherent band mixing. The theory is formulated for full tight-binding bands and uses no rotating-wave approximation.
- Received 4 December 2003
DOI:https://doi.org/10.1103/PhysRevLett.92.217403
©2004 American Physical Society