Self-Limited Growth of a Thin Oxide Layer on Rh(111)

J. Gustafson, A. Mikkelsen, M. Borg, E. Lundgren, L. Köhler, G. Kresse, M. Schmid, P. Varga, J. Yuhara, X. Torrelles, C. Quirós, and J. N. Andersen
Phys. Rev. Lett. 92, 126102 – Published 26 March 2004

Abstract

The oxidation of the Rh(111) surface at oxygen pressures from 1010   mbar to 0.5 bar and temperatures between 300 and 900 K has been studied on the atomic scale using a multimethod approach of experimental and theoretical techniques. Oxidation starts at the steps, resulting in a trilayer O-Rh-O surface oxide which, although not thermodynamically stable, prevents further oxidation at intermediate pressures. A thick corundum like Rh2O3 bulk oxide is formed only at significantly higher pressures and temperatures.

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  • Received 4 November 2003

DOI:https://doi.org/10.1103/PhysRevLett.92.126102

©2004 American Physical Society

Authors & Affiliations

J. Gustafson1,*, A. Mikkelsen1, M. Borg1, E. Lundgren1, L. Köhler2, G. Kresse2, M. Schmid3, P. Varga3, J. Yuhara4, X. Torrelles5, C. Quirós6,†, and J. N. Andersen1

  • 1Department of Synchrotron Radiation Research, Lund University, Box 118, S-221 00, Sweden
  • 2Institut für Materialphysik and Centre for Computational Materials Science, Universität Wien, A-1090 Wien, Austria
  • 3Institut für Allgemeine Physik, Technische Universität Wien, A-1040 Wien, Austria
  • 4Department of Physical Science and Engineering, Nagoya University, Nagoya, 464-8603, Japan
  • 5Institut de Ciencia de Materials de Barcelona (C.S.I.C), 08193, Bellaterra, Barcelona, Spain
  • 6European Synchrotron Radiation Facility, BP 220, 38043 Grenoble CEDEX, France

  • *Electronic address: johan.gustafson@sljus.lu.se
  • Present address: Dept. Física, Universidad de Oviedo, Avda. Calvo Sotelo s/n, 33007 Oviedo, Spain.

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Vol. 92, Iss. 12 — 26 March 2004

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