Comment on “Ferromagnetism in Magnetically Doped III-V Semiconductors”

G. Bouzerar
Phys. Rev. Lett. 92, 069701 – Published 10 February 2004

Abstract

A Comment on the Letter by V. I. Litvinov and V. K. Dugaev,

  • Received 30 May 2003

DOI:https://doi.org/10.1103/PhysRevLett.92.069701

©2004 American Physical Society

Authors & Affiliations

G. Bouzerar

  • Institut Laue Langevin BP 156, 38042 Grenoble Cedex 9, France

Comments & Replies

Litvinov and Dugaev Reply:

V. I. Litvinov and V. K. Dugaev
Phys. Rev. Lett. 92, 069702 (2004)

Article Text (Subscription Required)

Click to Expand

Original Article

Ferromagnetism in Magnetically Doped III-V Semiconductors

V. I. Litvinov and V. K. Dugaev
Phys. Rev. Lett. 86, 5593 (2001)

References (Subscription Required)

Click to Expand
Issue

Vol. 92, Iss. 6 — 13 February 2004

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×