Spin Susceptibility of Two-Dimensional Electrons in Narrow AlAs Quantum Wells

K. Vakili, Y. P. Shkolnikov, E. Tutuc, E. P. De Poortere, and M. Shayegan
Phys. Rev. Lett. 92, 226401 – Published 1 June 2004

Abstract

We report measurements of the spin susceptibility in dilute two-dimensional electrons confined to a 45Å wide AlAs quantum well. The electrons in this well occupy an out-of-plane conduction-band valley, rendering a system similar to two-dimensional electrons in Si-MOSFETs but with only one valley occupied. We observe an enhancement of the spin susceptibility over the band value that increases as the density is decreased, following closely the prediction of quantum Monte Carlo calculations and continuing at finite values through the metal-insulator transition.

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  • Received 21 October 2003

DOI:https://doi.org/10.1103/PhysRevLett.92.226401

©2004 American Physical Society

Authors & Affiliations

K. Vakili, Y. P. Shkolnikov, E. Tutuc, E. P. De Poortere, and M. Shayegan

  • Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

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Vol. 92, Iss. 22 — 4 June 2004

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