Electronic-Structure Dependence of the Electron-Phonon Interaction in Ag

J. J. Paggel, D.-A. Luh, T. Miller, and T.-C. Chiang
Phys. Rev. Lett. 92, 186803 – Published 6 May 2004

Abstract

The linewidths of sp- and d-band derived electronic quantum-well states in thin films of Ag on Fe(100) are measured as a function of temperature to yield the electron-phonon coupling parameters. The results vary by a factor of up to 35 among the different states. The origin of these huge differences is traced to the decay path selection for the various initial states of the holes created by the photoemission process. The electron-phonon coupling parameter for the top d-band quantum-well state, 0.015±0.006, is the smallest ever reported.

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  • Received 17 November 2003

DOI:https://doi.org/10.1103/PhysRevLett.92.186803

©2004 American Physical Society

Authors & Affiliations

J. J. Paggel

  • Institut für Experimentalphysik, Freie Universität Berlin, 14195 Berlin, Germany

D.-A. Luh

  • Stanford Linear Accelerator Center, Menlo Park, California 94015, USA

T. Miller and T.-C. Chiang

  • Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-3080, USA
  • Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-2902, USA

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Issue

Vol. 92, Iss. 18 — 7 May 2004

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