Strain, Size, and Composition of InAs Quantum Sticks Embedded in InP Determined via Grazing Incidence X-Ray Anomalous Diffraction

A. Létoublon, V. Favre-Nicolin, H. Renevier, M. G. Proietti, C. Monat, M. Gendry, O. Marty, and C. Priester
Phys. Rev. Lett. 92, 186101 – Published 5 May 2004

Abstract

We have used x-ray anomalous diffraction to recover the model-independent Fourier transform (x-ray structure factor) of InAs quantum sticklike islands embedded in InP. The average height of the quantum sticks, as deduced from the width of the structure factor profile, is 2.54 nm. The InAs out-of-plane deformation, relative to InP, is 6.1%. Diffraction anomalous fine structure provides evidence of pure InAs quantum sticks. Finite difference method calculations reproduce well the diffraction data, and give the strain along the growth direction. The chemical mixing at interfaces is also analyzed.

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  • Received 24 September 2003

DOI:https://doi.org/10.1103/PhysRevLett.92.186101

©2004 American Physical Society

Authors & Affiliations

A. Létoublon1, V. Favre-Nicolin1,2, H. Renevier1,2,*, M. G. Proietti3, C. Monat4, M. Gendry4, O. Marty5, and C. Priester6

  • 1Commissariat à l’Energie Atomique, Département de Recherche Fondamentale sur la Matière Condensée, SP2M/NRS, 17 rue des martyrs, 38054 Grenoble Cedex 9, France
  • 2Université Joseph Fourier, BP 53, F-38041, Grenoble Cedex 9, France
  • 3Departamento de Física de la Materia Condensada, Instituto de Ciencia de Materiales de Aragón, CSIC-Universidad de Zaragoza, calle Pedro Cerbuna 12, 50009 Zaragoza, Spain
  • 4LEOM, UMR-CNRS 5512, Ecole Centrale de Lyon, 69134 Ecully, France
  • 5LENAC, Université Lyon I, 69621 Villeurbanne, France
  • 6Institut d’Electronique, de Microélectronique et de Nanotechnologie, département ISEN, 59652 Villeneuve d’Ascq, France

  • *Electronic address: Hubert.Renevier@cea.fr

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Vol. 92, Iss. 18 — 7 May 2004

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