Changing the Diffusion Mechanism of Ge-Si Dimers on Si(001) using an Electric Field

L. M. Sanders, R. Stumpf, T. R. Mattsson, and B. S. Swartzentruber
Phys. Rev. Lett. 91, 206104 – Published 14 November 2003

Abstract

We change the diffusion mechanism of adsorbed Ge-Si dimers on Si(001) using the electric field of a scanning tunneling microscope tip. By comparing the measured field dependence with first-principles calculations we conclude that, in negative field, i.e., when electrons are attracted towards the vacuum, the dimer diffuses as a unit, rotating as it translates, whereas, in positive field the dimer bond is substantially stretched at the transition state as it slides along the substrate. Furthermore, the active mechanism in positive fields facilitates intermixing of Ge in the Si lattice, whereas intermixing is suppressed in negative fields.

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  • Received 25 February 2003

DOI:https://doi.org/10.1103/PhysRevLett.91.206104

©2003 American Physical Society

Authors & Affiliations

L. M. Sanders, R. Stumpf, T. R. Mattsson, and B. S. Swartzentruber

  • Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

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Vol. 91, Iss. 20 — 14 November 2003

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