Exciton Dephasing in Quantum Dot Molecules

P. Borri, W. Langbein, U. Woggon, M. Schwab, M. Bayer, S. Fafard, Z. Wasilewski, and P. Hawrylak
Phys. Rev. Lett. 91, 267401 – Published 23 December 2003

Abstract

We have measured the exciton dephasing time in InAs/GaAs quantum dot molecules having different interdot barrier thicknesses in the temperature range from 5 to 60 K, using a highly sensitive four-wave mixing heterodyne technique. At 5 K dephasing times of several hundred picoseconds are found. Moreover, a systematic dependence of the dephasing dynamics on the barrier thickness is observed. These results show how the quantum-mechanical coupling of the electronic wave functions in the molecules affects both the exciton radiative lifetime and the exciton-acoustic phonon interaction.

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  • Received 29 July 2003

DOI:https://doi.org/10.1103/PhysRevLett.91.267401

©2003 American Physical Society

Authors & Affiliations

P. Borri, W. Langbein, U. Woggon, M. Schwab, and M. Bayer

  • Experimentelle Physik II, Universität Dortmund, Otto-Hahn Strasse 4, D-44227 Dortmund, Germany

S. Fafard, Z. Wasilewski, and P. Hawrylak

  • Institute for Microstructural Science, National Research Council, Ottawa, K1A 0R6, Canada

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Issue

Vol. 91, Iss. 26 — 31 December 2003

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