Light-Emitting Field-Effect Transistor Based on a Tetracene Thin Film

Aline Hepp, Holger Heil, Wieland Weise, Marcus Ahles, Roland Schmechel, and Heinz von Seggern
Phys. Rev. Lett. 91, 157406 – Published 10 October 2003

Abstract

We report the first organic light-emitting field-effect transistor. The device structure comprises interdigitated gold source and drain electrodes on a Si/SiO2 substrate. A polycrystalline tetracene thin film is vacuum sublimated on the substrate forming the active layer of the device. Both holes and electrons are injected from the gold contacts into this layer leading to electroluminescence from the tetracene. The output characteristics, transfer characteristics, and the optical emission properties of the device are reported. A possible mechanism for electron injection is suggested.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
1 More
  • Received 4 April 2003

DOI:https://doi.org/10.1103/PhysRevLett.91.157406

©2003 American Physical Society

Authors & Affiliations

Aline Hepp, Holger Heil, Wieland Weise, Marcus Ahles, Roland Schmechel, and Heinz von Seggern

  • Institute of Materials Science, Darmstadt University of Technology, Petersenstrasse 23, 64287 Darmstadt, Germany

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 91, Iss. 15 — 10 October 2003

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×