Coherent Backscattering near the Two-Dimensional Metal-Insulator Transition

Maryam Rahimi, S. Anissimova, M. R. Sakr, S. V. Kravchenko, and T. M. Klapwijk
Phys. Rev. Lett. 91, 116402 – Published 9 September 2003

Abstract

We have studied corrections to conductivity due to the coherent backscattering in low-disordered two-dimensional electron systems in silicon for a range of electron densities including the vicinity of the metal-insulator transition, where the dramatic increase of the spin susceptibility has been observed earlier. We show that the corrections, which exist deeper in the metallic phase, weaken upon approaching the transition and practically vanish at the critical density, thus suggesting that the localization is suppressed near and at the transition even in zero field.

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  • Received 17 April 2003

DOI:https://doi.org/10.1103/PhysRevLett.91.116402

©2003 American Physical Society

Authors & Affiliations

Maryam Rahimi, S. Anissimova, M. R. Sakr, and S. V. Kravchenko

  • Physics Department, Northeastern University, Boston, Massachusetts 02115, USA

T. M. Klapwijk

  • Department of Applied Physics, Delft University of Technology, 2628 CJ Delft, The Netherlands

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Issue

Vol. 91, Iss. 11 — 12 September 2003

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