Effective Hamiltonian for Ga1xMnxAs in the Dilute Limit

Gregory A. Fiete, Gergely Zaránd, and Kedar Damle
Phys. Rev. Lett. 91, 097202 – Published 29 August 2003

Abstract

We derive an effective Hamiltonian for Ga1xMnxAs in the dilute limit, where Ga1xMnxAs can be described in terms of spin F=3/2 polarons hopping between the Mn sites and coupled to the local Mn spins. We determine the parameters of our model from microscopic calculations. Our approach treats the large Coulomb interaction in a nonperturbative way, captures the effects of spin-orbit coupling and disorder, and is appropriate for other p-doped magnetic semiconductors.

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  • Received 6 December 2002

DOI:https://doi.org/10.1103/PhysRevLett.91.097202

©2003 American Physical Society

Authors & Affiliations

Gregory A. Fiete1,2,3, Gergely Zaránd1,2,3, and Kedar Damle1,4

  • 1Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
  • 2Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois, 60429, USA
  • 3Research Institute of Physics, Budapest University of Technology and Economics, Budapest H-1521, Hungary
  • 4Department of Physics and Astronomy, Rice University, Houston, Texas 77005, USA

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Issue

Vol. 91, Iss. 9 — 29 August 2003

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