Dynamic Nuclear Polarization by Electrical Spin Injection in Ferromagnet-Semiconductor Heterostructures

J. Strand, B. D. Schultz, A. F. Isakovic, C. J. Palmstrøm, and P. A. Crowell
Phys. Rev. Lett. 91, 036602 – Published 18 July 2003

Abstract

Electrical spin injection from Fe into AlxGa1xAs quantum well heterostructures is demonstrated in small (<500Oe) in-plane magnetic fields. The measurement is sensitive only to the component of the spin that precesses about the internal magnetic field in the semiconductor. This field is much larger than the applied field and depends strongly on the injection current density. Details of the observed hysteresis in the spin injection signal are reproduced in a model that incorporates the magnetocrystalline anisotropy of the epitaxial Fe film, spin relaxation in the semiconductor, and the dynamic polarization of nuclei by the injected spins.

  • Figure
  • Figure
  • Figure
  • Received 19 February 2003

DOI:https://doi.org/10.1103/PhysRevLett.91.036602

©2003 American Physical Society

Authors & Affiliations

J. Strand1, B. D. Schultz2, A. F. Isakovic1, C. J. Palmstrøm2, and P. A. Crowell1,*

  • 1School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA
  • 2Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA

  • *Electronic address: crowell@physics.umn.edu

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 91, Iss. 3 — 18 July 2003

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×