Equilibrium Model of Bimodal Distributions of Epitaxial Island Growth

Robert E. Rudd, G. A. D. Briggs, A. P. Sutton, G. Medeiros-Ribeiro, and R. Stanley Williams
Phys. Rev. Lett. 90, 146101 – Published 8 April 2003

Abstract

We present a nanostructure diagram for use in designing heteroepitaxial systems of quantum dots. The nanostructure diagram is computed using a new equilibrium statistical physics model and predicts the island size and shape distributions for a range of combinations of growth temperature and amount of deposited material. The model is applied to Ge on Si(001), the archetype for bimodal island growth, and the results compare well with data from atomic force microscopy of Ge/Si islands grown by chemical vapor deposition.

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  • Received 29 May 2002

DOI:https://doi.org/10.1103/PhysRevLett.90.146101

©2003 American Physical Society

Authors & Affiliations

Robert E. Rudd*

  • Lawrence Livermore National Laboratory, Condensed Matter Physics Division, L-045, Livermore, California 94551

G. A. D. Briggs and A. P. Sutton

  • Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom

G. Medeiros-Ribeiro

  • Laboratório Nacional de Luz Síncrotron, P.O. Box 6192, Campinas, SP 13084-971, Brazil

R. Stanley Williams

  • Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304

  • *Electronic address: robert.rudd@llnl.gov

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Issue

Vol. 90, Iss. 14 — 11 April 2003

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