Optical Detection of Hot-Electron Spin Injection into GaAs from a Magnetic Tunnel Transistor Source

X. Jiang, R. Wang, S. van Dijken, R. Shelby, R. Macfarlane, G. S. Solomon, J. Harris, and S. S. P. Parkin
Phys. Rev. Lett. 90, 256603 – Published 23 June 2003

Abstract

Injection of spin-polarized hot-electron current from a magnetic tunnel transistor into GaAs is demonstrated by the observation of polarized light emission from a GaAs/In0.2Ga0.8As multiple quantum well light-emitting diode. Electroluminescence from the quantum wells shows a polarization of 10% after subtraction of a linear background polarization. The polarization shows a strong dependence on the bias voltage across the diode, which may originate from changes in the electron spin relaxation rate in the quantum wells under varying bias conditions.

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  • Received 31 December 2002

DOI:https://doi.org/10.1103/PhysRevLett.90.256603

©2003 American Physical Society

Authors & Affiliations

X. Jiang1,2, R. Wang1,2, S. van Dijken1, R. Shelby1, R. Macfarlane1, G. S. Solomon2, J. Harris2, and S. S. P. Parkin1

  • 1IBM Research Division, Almaden Research Center, San Jose, California 95120, USA
  • 2Solid State and Photonics Laboratory, Stanford University, Stanford, California 94305, USA

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Vol. 90, Iss. 25 — 27 June 2003

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