Abstract
Injection of spin-polarized hot-electron current from a magnetic tunnel transistor into GaAs is demonstrated by the observation of polarized light emission from a multiple quantum well light-emitting diode. Electroluminescence from the quantum wells shows a polarization of after subtraction of a linear background polarization. The polarization shows a strong dependence on the bias voltage across the diode, which may originate from changes in the electron spin relaxation rate in the quantum wells under varying bias conditions.
- Received 31 December 2002
DOI:https://doi.org/10.1103/PhysRevLett.90.256603
©2003 American Physical Society