Crossing the Gap from p- to n-Type Doping: Nature of the States near the Chemical Potential in La2xSrxCuO4 and Nd2xCexCuO4δ

P. G. Steeneken, L. H. Tjeng, G. A. Sawatzky, A. Tanaka, O. Tjernberg, G. Ghiringhelli, N. B. Brookes, A. A. Nugroho, and A. A. Menovsky
Phys. Rev. Lett. 90, 247005 – Published 19 June 2003

Abstract

We report on an x-ray absorption and resonant photoemission study on single crystals of the high-Tc cuprates La2xSrxCuO4 and Nd2xCexCuO4δ. Using an intrinsic energy reference, we find that the chemical potential of La2xSrxCuO4 lies near the top of the La2CuO4 valence band whereas in Nd2xCexCuO4δ it is situated near the bottom of the Nd2CuO4 conduction band. The data clearly establish that the introduction of Ce in Nd2CuO4 results in electrons being doped into the CuO2 planes. We infer that the states closest to the chemical potential have a Cu 3d10 singlet origin in Nd2xCexCuO4δ and a 3d9L̲ singlet origin in La2xSrxCuO4.

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  • Received 2 February 2003

DOI:https://doi.org/10.1103/PhysRevLett.90.247005

©2003 American Physical Society

Authors & Affiliations

P. G. Steeneken1, L. H. Tjeng1,2, G. A. Sawatzky1,3, A. Tanaka4, O. Tjernberg5,6, G. Ghiringhelli6,7, N. B. Brookes6, A. A. Nugroho1, and A. A. Menovsky8

  • 1MSC, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
  • 2II. Physikalisches Institut, Universität zu Köln, Zülpicher Straße 77, 50937 Köln, Germany
  • 3Department of Physics, University of British Columbia, Vancouver, Canada BC V6T 1Z4
  • 4Department of Quantum Matter, ADSM Hiroshima University, Higashi-Hiroshima 739-8526, Japan
  • 5LMSP, Royal Institute of Technology, Electrum 229, S-164 40 Kista, Sweden
  • 6European Synchrotron Radiation Facility (ESRF), BP 220, F-38043 Grenoble, France
  • 7INFM, Dipartimento di Fisica, Politecnico di Milano, 20133 Milano, Italy
  • 8Van der Waals–Zeeman Laboratory, University of Amsterdam, 1018 XE Amsterdam, The Netherlands

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Vol. 90, Iss. 24 — 20 June 2003

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