Voltage-Controlled Spin Selection in a Magnetic Resonant Tunneling Diode

A. Slobodskyy, C. Gould, T. Slobodskyy, C. R. Becker, G. Schmidt, and L. W. Molenkamp
Phys. Rev. Lett. 90, 246601 – Published 19 June 2003

Abstract

We have fabricated all IIVI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.

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  • Received 7 March 2003

DOI:https://doi.org/10.1103/PhysRevLett.90.246601

©2003 American Physical Society

Authors & Affiliations

A. Slobodskyy, C. Gould, T. Slobodskyy, C. R. Becker, G. Schmidt, and L. W. Molenkamp

  • Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

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Issue

Vol. 90, Iss. 24 — 20 June 2003

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