Electronic Structure of Oxygen Dangling Bond in Glassy SiO2: The Role of Hyperconjugation

Takenobu Suzuki, Linards Skuja, Koichi Kajihara, Masahiro Hirano, Toshio Kamiya, and Hideo Hosono
Phys. Rev. Lett. 90, 186404 – Published 8 May 2003

Abstract

The electronic structure and the nature of optical transitions in oxygen dangling bond in silica glass, the nonbridging oxygen hole center (NBOHC), were calculated. The calculation reproduced well the peak positions and oscillator strengths of the well-known optical absorption bands at 2.0 and 4.8 eV, and of the recently discovered absorption band at 6.8 eV. The 2.0 eV band was attributed to transition from the σ bond between Si and dangling oxygen to nonbonding π orbital on the dangling oxygen. The uniquely small electron-phonon coupling associated with the 2.0 eV transition is explained by stabilization of Si-O bond in the excited state by hyperconjugation effects.

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  • Received 22 June 2002

DOI:https://doi.org/10.1103/PhysRevLett.90.186404

©2003 American Physical Society

Authors & Affiliations

Takenobu Suzuki1,2, Linards Skuja2,3, Koichi Kajihara2, Masahiro Hirano2, Toshio Kamiya1,2, and Hideo Hosono1,2

  • 1Materials and Structures Laboratory, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • 2Transparent Electroactive Materials, Exploratory Research for Advanced Technology, Japan Science and Technology Corporation, KSP C-1232, Sakato 3-2-1, Takatsu, Kawasaki 213-0012, Japan
  • 3Institute of Solid State Physics, University of Latvia, 8 Kengaraga Street LV-1063, Riga, Latvia

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Issue

Vol. 90, Iss. 18 — 9 May 2003

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