High-Pressure Raman Study of Ba Doped Silicon Clathrate

Tetsuji Kume, Hiroshi Fukuoka, Toshihiro Koda, Shigeo Sasaki, Hiroyasu Shimizu, and Shoji Yamanaka
Phys. Rev. Lett. 90, 155503 – Published 15 April 2003

Abstract

Vibrational properties of Ba doped Si clathrate are investigated at high pressures up to 20 GPa by Raman spectroscopy. Vibrations related with Ba encaged in the Si cages are observed below 100cm1 by low-frequency Raman measurements of Ba8Si46 and Ba6.6Si46 clathrates. The high-pressure Raman spectra obtained for both compression and decompression processes reveal a new phase transition at 7 GPa, and the reversibility of the phase transition at 15 GPa. We investigate the mechanisms of these phase transitions, the interaction between the guest and host frame, and the volume dependence of the vibrational modes.

  • Figure
  • Figure
  • Figure
  • Received 20 December 2002

DOI:https://doi.org/10.1103/PhysRevLett.90.155503

©2003 American Physical Society

Authors & Affiliations

Tetsuji Kume1,*, Hiroshi Fukuoka2, Toshihiro Koda3, Shigeo Sasaki1,3, Hiroyasu Shimizu1,3, and Shoji Yamanaka2

  • 1Department of Materials Science and Technology, Faculty of Engineering, Gifu University, 1-1 Yanagido, Gifu, 501-1193, Japan
  • 2Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Higasi-Hiroshima 739-8527, Japan
  • 3Environmental and Renewable Energy Systems, Graduate School of Engineering, Gifu University, 1-1 Yanagido, Gifu, 501-1193, Japan

  • *Electronic address: kume@cc.gifu-u.ac.jp

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 90, Iss. 15 — 18 April 2003

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×