Coupled Electron-Phonon Modes in Optically Pumped Resonant Intersubband Lasers

H. C. Liu, C. Y. Song, Z. R. Wasilewski, A. J. SpringThorpe, J. C. Cao, C. Dharma-wardana, G. C. Aers, D. J. Lockwood, and J. A. Gupta
Phys. Rev. Lett. 90, 077402 – Published 20 February 2003

Abstract

Intersubband lasing at 1216μm based on a CO2 laser pumped stimulated resonant Raman process in GaAs/AlGaAs three-level double-quantum-well structures is reported. The presence, or lack of, lasing action provides evidence for resonantly coupled modes of collective electronic intersubband transitions and longitudinal optical phonons. An anticrossing behavior of these modes is clearly seen when the difference between the pump and lasing energies (i.e., Stokes Raman shift) is compared with the subband separation. This work reveals the significance of the strong coupling between intersubband transitions and phonons and raises a new possibility of realizing a phonon “laser.”

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  • Received 4 July 2002

DOI:https://doi.org/10.1103/PhysRevLett.90.077402

©2003 American Physical Society

Authors & Affiliations

H. C. Liu*, C. Y. Song, Z. R. Wasilewski, and A. J. SpringThorpe

  • Institute for Microstructural Sciences, National Research Council, Ottawa, Canada K1A 0R6

J. C. Cao

  • Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

C. Dharma-wardana, G. C. Aers, D. J. Lockwood, and J. A. Gupta

  • Institute for Microstructural Sciences, National Research Council, Ottawa, Canada K1A 0R6

  • *Electronic address: h.c.liu@nrc.ca

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Vol. 90, Iss. 7 — 21 February 2003

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