Abstract
We have measured the resistance noise of a two-dimensional (2D) hole system in a high mobility GaAs quantum well, around the 2D metal-insulator transition (MIT) at zero magnetic field. The normalized noise power increases strongly when the hole density is decreased, increases slightly with temperature () at the largest densities, and decreases strongly with at low . The noise scales with the resistance, , as for a second order phase transition such as a percolation transition. The dependence of the conductivity is consistent with a critical behavior for such a transition, near a density which is lower than the observed MIT critical density .
- Received 24 September 2002
DOI:https://doi.org/10.1103/PhysRevLett.90.076402
©2003 American Physical Society