Universal Behavior of the Resistance Noise across the Metal-Insulator Transition in Silicon Inversion Layers

J. Jaroszyński, Dragana Popović, and T. M. Klapwijk
Phys. Rev. Lett. 89, 276401 – Published 17 December 2002

Abstract

Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional (2D) electron system in the vicinity of the metal-insulator transition occurs in all Si inversion layers. The size of the metallic glass phase, which separates the 2D metal and the (glassy) insulator, depends strongly on disorder, becoming extremely small in high-mobility samples. The behavior of the second spectrum, an important fourth-order noise statistic, indicates the presence of long-range correlations between fluctuators in the glassy phase, consistent with the hierarchical picture of glassy dynamics.

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  • Received 10 May 2002

DOI:https://doi.org/10.1103/PhysRevLett.89.276401

©2002 American Physical Society

Authors & Affiliations

J. Jaroszyński1,*, Dragana Popović1, and T. M. Klapwijk2

  • 1National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310
  • 2Department of Applied Physics, Delft University of Technology, 2628 CJ Delft, The Netherlands

  • *Also at Institute of Physics, PAS, Warsaw, Poland. Electronic address: jaroszy@magnet.fsu.edu

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Issue

Vol. 89, Iss. 27 — 30 December 2002

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